International Conference on Extended Defects in Semiconductors
June 24-29, 2012, Thessaloniki, Greece
Prof. Theodore Moustakas
Professor of Electrical and Computer Engineering, Associate Head of the Division of Material Science and Engineering, Professor of Physics, Director of Wide Bandgap Semiconductors Laboratory, Photonics Center, Boston University
"The role of extended defects in the performance of electronic and optoelectronic devices"
Prof. Sokrates T. Pantelides
University Distinguished Professor of Physics and Engineering, William A. and Nancy F. McMinn Professor of Physics and Professor of Electrical Engineering, Vanderbilt University
"Device degradation-the defects that cause the trouble"
Dr. Martin Albrecht
Leibniz-Institut für Kristallzüchtung Berlin, Germany
"Dislocation Mechanisms and Strain Relaxation in the Growth of GaN on Silicon Substrates for Solid State Lighting"
Prof. Keiichi Edagawa
University of Tokyo, Institute of Industrial Science, Tokyo, Japan
"Photonic band-gap and defect states in a photonic amorphous material"
Prof. Alexey E. Romanov and Prof. James S. Speck
Prof. Dr. Sci. Leader Researcher, Ioffe Institute RAS, Russia
"Modeling of misfit and threading dislocations in semiconductor heterostructures"
Prof. Andreas Rosenauer
Bremen University, Institute of Solid State Physics-Electron Microscopy, Germany
"Composition determination in nitride based nanostructures using HAADF STEM"
Prof. Yutaka Ohno
IMR, Tohoku University, Japan
"Revisiting radiation-enhanced dislocation glide with recent studies on 4H-SiC"
Prof. Ichiro Yonenaga
Institute for Materials Research, Tohoku University, Japan
"Defects in SiGe bulk alloys"
Dr. Jacques Rabier
Institute P', UPR 3346 - CNRS - Université de Poitiers – ENSMA, France
"Silicon Nanopillar Deformation: High Stress Plasticity and the Influence of Doping"
Co-authors: R. Ghisleni, A. Montagne, J. L. Demenet, J. Michler
Prof. Robert Hull
Head of the Materials Science and Engineering Department and the Henry Burlage Professor of Engineering, Rensselaer Polytechnic Institute, USA
"A New Methodology for Mapping Dislocation Generation in Semiconductor Thin Film Growth and Processing: The Materials Cladogram"
Prof. Pirouz Pirouz
Department of Materials Science and Engineering, Case Western Reserve University, USA
"The Concept of Quasi-Fermi Level and Degradation of SiC Bipolar Devices"
Dr. Daniela Cavalcoli
Dipartimento di Fisica, Università di Bologna, Italia
"Dislocations in III-nitrides investigated by atomic force microscopy"
Co-authors: A. Minj and A. Cavallini
Dr. Gabrielle Regula
IM2NP, UMR-CNRS 7334, Université Paul Cézanne, France
"Stacking fault multiplicity in intrinsic and N-doped 4H-SiC"
Co-authors: T. Neisius, R. Daineche, S. Juillaguet, B. Pichaud and M. Lancin
Prof. Eirini Sarigiannidou
LMGP, Grenoble INP, France
"Strain relaxation in GaN/AlGaN superlattices grown by PAMBE for intersubband applications"
Co-authors: B. Doisneau, Y. Kotsar, E. Bellet-Amalric, A. Das and E. Monroy