International Conference on Extended Defects in Semiconductors |
Plenary talksProf. Theodore Moustakas Professor of Electrical and Computer Engineering, Associate Head of the Division of Material Science and Engineering, Professor of Physics, Director of Wide Bandgap Semiconductors Laboratory, Photonics Center, Boston University "The role of extended defects in the performance of electronic and optoelectronic devices" Prof. Sokrates T. Pantelides University Distinguished Professor of Physics and Engineering, William A. and Nancy F. McMinn Professor of Physics and Professor of Electrical Engineering, Vanderbilt University "Device degradation-the defects that cause the trouble" Invited speakersDr. Martin Albrecht Leibniz-Institut für Kristallzüchtung Berlin, Germany "Dislocation Mechanisms and Strain Relaxation in the Growth of GaN on Silicon Substrates for Solid State Lighting" Prof. Keiichi Edagawa University of Tokyo, Institute of Industrial Science, Tokyo, Japan "Photonic band-gap and defect states in a photonic amorphous material" Prof. Alexey E. Romanov and Prof. James S. Speck Prof. Dr. Sci. Leader Researcher, Ioffe Institute RAS, Russia "Modeling of misfit and threading dislocations in semiconductor heterostructures" Prof. Andreas Rosenauer Bremen University, Institute of Solid State Physics-Electron Microscopy, Germany "Composition determination in nitride based nanostructures using HAADF STEM" Prof. Yutaka Ohno IMR, Tohoku University, Japan "Revisiting radiation-enhanced dislocation glide with recent studies on 4H-SiC" Prof. Ichiro Yonenaga Institute for Materials Research, Tohoku University, Japan "Defects in SiGe bulk alloys" Dr. Jacques Rabier Institute P', UPR 3346 - CNRS - Université de Poitiers – ENSMA, France "Silicon Nanopillar Deformation: High Stress Plasticity and the Influence of Doping" Co-authors: R. Ghisleni, A. Montagne, J. L. Demenet, J. Michler Prof. Robert Hull Head of the Materials Science and Engineering Department and the Henry Burlage Professor of Engineering, Rensselaer Polytechnic Institute, USA "A New Methodology for Mapping Dislocation Generation in Semiconductor Thin Film Growth and Processing: The Materials Cladogram" Prof. Pirouz Pirouz Department of Materials Science and Engineering, Case Western Reserve University, USA "The Concept of Quasi-Fermi Level and Degradation of SiC Bipolar Devices" Dr. Daniela Cavalcoli Dipartimento di Fisica, Università di Bologna, Italia "Dislocations in III-nitrides investigated by atomic force microscopy" Co-authors: A. Minj and A. Cavallini Dr. Gabrielle Regula IM2NP, UMR-CNRS 7334, Université Paul Cézanne, France "Stacking fault multiplicity in intrinsic and N-doped 4H-SiC" Co-authors: T. Neisius, R. Daineche, S. Juillaguet, B. Pichaud and M. Lancin Prof. Eirini Sarigiannidou LMGP, Grenoble INP, France "Strain relaxation in GaN/AlGaN superlattices grown by PAMBE for intersubband applications" Co-authors: B. Doisneau, Y. Kotsar, E. Bellet-Amalric, A. Das and E. Monroy |
