International Conference on Extended Defects in Semiconductors
June 24-29, 2012, Thessaloniki, Greece
The biennial Extended Defects in Semiconductors Conference Series started in 1978 with a meeting in Hünfeld, Germany. Subsequent meetings took place in Poland, France, Great Britain, Germany, Russia and Italy. EDS2010 was held at the University of Sussex in Brighton, UK.
EDS-2012 targets the overall vision of research activities of the scientific community, based on needs that stem from technological bottlenecks involving structural defects in present day and future poly-/nano- crystalline and nanostructured semiconductor material systems and their role in the functionality of innovative nanodevices. Within this objective, invited talks and contributions aim at structuring a stimulating conference program covering a variety of hot topics related to a broad range of emerging electronic materials that include, but are not limited to: group-IV semiconductors and their alloys, III-V and II-VI compound semiconductors, III-nitrides and alloys, magnetic semiconductors, carbon-based semiconductors (e.g. diamond, graphite etc.), conducting oxides and organic semiconductors.